Betekenis van:
chemical compound

Voorbeeldzinnen

1. Chemical wastes excluding Used oils (Chemical compound waste + Chemical preparation wastes + Other chemical wastes)
2. Chemical installations for the production of phosphorous-, nitrogen- or potassium-based fertilisers (simple or compound fertilisers).
3. Metal organic chemical vapour deposition (MOCVD) reactors specially designed for compound semiconductor crystal growth by the chemical reaction between materials specified in 3C003 or 3C004;
4. (Chemical compound wastes excluding Used oils + Chemical preparation wastes + Other chemical wastes + Health care and biological wastes + Wood wastes + Waste containing PCB + Discarded equipment + Mixed ordinary wastes + Common sludges + Solidified, stabilised or vitrified wastes)
5. "Natural uranium" or "depleted uranium" or thorium in the form of metal, alloy, chemical compound or concentrate and any other material containing one or more of the foregoing;
6. Within any one heading of this chapter, derivatives of a chemical compound (or group of chemical compounds) are to be classified in the same subheading as that compound (or group of compounds), provided that they are not more specifically covered by any other subheading and that there is no residual subheading named ‘Other’ in the series of subheadings concerned.
7. the expression ‘absorbent, reflecting or non-reflecting layer’ means a microscopically thin coating of metal or of a chemical compound (for example, metal oxide) which absorbs, for example, infra-red light or improves the reflecting qualities of the glass while still allowing it to retain a degree of transparency or translucency; or which prevents light from being reflected on the surface of the glass.
8. Equipment for the manufacturing of semiconductor devices or materials, as follows, and specially designed components and accessories therefor: a. Equipment designed for epitaxial growth, as follows: 1. Equipment capable of producing a layer of any material other than silicon with a thickness uniform to less than ± 2,5 % across a distance of 75 mm or more; 2. Metal organic chemical vapour deposition (MOCVD) reactors specially designed for compound semiconductor crystal growth by the chemical reaction between materials specified in 3C003 or 3C004; 3. Molecular beam epitaxial growth equipment using gas or solid sources;